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Resonant tunnelling diode in mbe-grown delta-doped GaAs
Yeong-Her Wang
, Mau-phon Houng
, H. H. Chen
, H. C. Wei
微電子工程研究所
奈米積體電路工程碩士學位學程
研究成果
:
Article
›
同行評審
4
引文 斯高帕斯（Scopus）
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深入研究「Resonant tunnelling diode in mbe-grown delta-doped GaAs」主題。共同形成了獨特的指紋。
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Engineering
Resonant Tunneling
100%
Negative Differential Resistance
100%
Transmission Coefficient
50%
Resistance Characteristic
50%
Current Ratio
50%
Decreasing Temperature
50%
Conduction Band
50%
Tunnel
50%
Aluminium Gallium Arsenide
50%
Matrix Method
50%
Band Model
50%
Gaas Layer
50%
Keyphrases
Delta Doping
100%
Resonant Tunneling Diode
100%
Negative Differential Resistance
50%
Ni-P
50%
Transmission Coefficient
25%
Conduction Band
25%
Resistance Characteristics
25%
Energy Gap
25%
Transfer Matrix Method
25%
Two-band Model
25%
Doped Structure
25%
Peak-to-valley Current Ratio
25%
Decreasing Temperature
25%
Highest Peak
25%
Double-barrier Structure
25%
AlGaAs
25%
Inherent Properties
25%
Resonant-tunneling Structures
25%
Room Temperature
25%
Light Hole
25%
Physics
Transfer-Matrix Method
100%
Resonant Tunneling
100%
Conduction Band
100%
Resonant Tunneling Diodes
100%
Material Science
GaAs/AlGaAs
33%