Reverse antenna effect due to process-induced quasi-breakdown of gate oxide

Jone F. Chen, Carol Gelatos, Philip Tobin, Rob Shimer, Chenming Hu

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

It was found that wafer charging during processing can cause the quasi-breakdown of gate oxide and lead to more than four orders of magnitude increase in gate leakage current. Gate oxides that have experienced this quasi-breakdown display minimal transistor parameter shifts under constant gate current stress because the stress field sustained across the oxide is low. As a result, large antenna devices, which experience significant wafer charging, have a greater percentage of oxides which have experienced quasi-breakdown and therefore display smaller than expected parameter shifts. To avoid misleading conclusions, an appropriate interpretation of the characterization results is necessary especially for thin gate oxides.

原文English
頁面94-97
頁數4
出版狀態Published - 1996 十二月 1
事件Proceedings of the 1996 International Integrated Reliability Workshop - Lake Tahoe, CA, USA
持續時間: 1996 十月 201996 十月 23

Other

OtherProceedings of the 1996 International Integrated Reliability Workshop
城市Lake Tahoe, CA, USA
期間96-10-2096-10-23

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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