Reverse antenna effect due to process-induced quasi-breakdown of gate oxide

Jone F. Chen, Carol Gelatos, Philip Tobin, Rob Shimer, Chenming Hu

研究成果: Paper

摘要

It was found that wafer charging during processing can cause the quasi-breakdown of gate oxide and lead to more than four orders of magnitude increase in gate leakage current. Gate oxides that have experienced this quasi-breakdown display minimal transistor parameter shifts under constant gate current stress because the stress field sustained across the oxide is low. As a result, large antenna devices, which experience significant wafer charging, have a greater percentage of oxides which have experienced quasi-breakdown and therefore display smaller than expected parameter shifts. To avoid misleading conclusions, an appropriate interpretation of the characterization results is necessary especially for thin gate oxides.

原文English
頁面94-97
頁數4
出版狀態Published - 1996 十二月 1
事件Proceedings of the 1996 International Integrated Reliability Workshop - Lake Tahoe, CA, USA
持續時間: 1996 十月 201996 十月 23

Other

OtherProceedings of the 1996 International Integrated Reliability Workshop
城市Lake Tahoe, CA, USA
期間96-10-2096-10-23

指紋

Antennas
Oxides
Leakage currents
Transistors
Processing

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

引用此文

Chen, J. F., Gelatos, C., Tobin, P., Shimer, R., & Hu, C. (1996). Reverse antenna effect due to process-induced quasi-breakdown of gate oxide. 94-97. 論文發表於 Proceedings of the 1996 International Integrated Reliability Workshop, Lake Tahoe, CA, USA, .
Chen, Jone F. ; Gelatos, Carol ; Tobin, Philip ; Shimer, Rob ; Hu, Chenming. / Reverse antenna effect due to process-induced quasi-breakdown of gate oxide. 論文發表於 Proceedings of the 1996 International Integrated Reliability Workshop, Lake Tahoe, CA, USA, .4 p.
@conference{11a9670a20114643bb92985a4e43dafb,
title = "Reverse antenna effect due to process-induced quasi-breakdown of gate oxide",
abstract = "It was found that wafer charging during processing can cause the quasi-breakdown of gate oxide and lead to more than four orders of magnitude increase in gate leakage current. Gate oxides that have experienced this quasi-breakdown display minimal transistor parameter shifts under constant gate current stress because the stress field sustained across the oxide is low. As a result, large antenna devices, which experience significant wafer charging, have a greater percentage of oxides which have experienced quasi-breakdown and therefore display smaller than expected parameter shifts. To avoid misleading conclusions, an appropriate interpretation of the characterization results is necessary especially for thin gate oxides.",
author = "Chen, {Jone F.} and Carol Gelatos and Philip Tobin and Rob Shimer and Chenming Hu",
year = "1996",
month = "12",
day = "1",
language = "English",
pages = "94--97",
note = "Proceedings of the 1996 International Integrated Reliability Workshop ; Conference date: 20-10-1996 Through 23-10-1996",

}

Chen, JF, Gelatos, C, Tobin, P, Shimer, R & Hu, C 1996, 'Reverse antenna effect due to process-induced quasi-breakdown of gate oxide', 論文發表於 Proceedings of the 1996 International Integrated Reliability Workshop, Lake Tahoe, CA, USA, 96-10-20 - 96-10-23 頁 94-97.

Reverse antenna effect due to process-induced quasi-breakdown of gate oxide. / Chen, Jone F.; Gelatos, Carol; Tobin, Philip; Shimer, Rob; Hu, Chenming.

1996. 94-97 論文發表於 Proceedings of the 1996 International Integrated Reliability Workshop, Lake Tahoe, CA, USA, .

研究成果: Paper

TY - CONF

T1 - Reverse antenna effect due to process-induced quasi-breakdown of gate oxide

AU - Chen, Jone F.

AU - Gelatos, Carol

AU - Tobin, Philip

AU - Shimer, Rob

AU - Hu, Chenming

PY - 1996/12/1

Y1 - 1996/12/1

N2 - It was found that wafer charging during processing can cause the quasi-breakdown of gate oxide and lead to more than four orders of magnitude increase in gate leakage current. Gate oxides that have experienced this quasi-breakdown display minimal transistor parameter shifts under constant gate current stress because the stress field sustained across the oxide is low. As a result, large antenna devices, which experience significant wafer charging, have a greater percentage of oxides which have experienced quasi-breakdown and therefore display smaller than expected parameter shifts. To avoid misleading conclusions, an appropriate interpretation of the characterization results is necessary especially for thin gate oxides.

AB - It was found that wafer charging during processing can cause the quasi-breakdown of gate oxide and lead to more than four orders of magnitude increase in gate leakage current. Gate oxides that have experienced this quasi-breakdown display minimal transistor parameter shifts under constant gate current stress because the stress field sustained across the oxide is low. As a result, large antenna devices, which experience significant wafer charging, have a greater percentage of oxides which have experienced quasi-breakdown and therefore display smaller than expected parameter shifts. To avoid misleading conclusions, an appropriate interpretation of the characterization results is necessary especially for thin gate oxides.

UR - http://www.scopus.com/inward/record.url?scp=0030348649&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030348649&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030348649

SP - 94

EP - 97

ER -

Chen JF, Gelatos C, Tobin P, Shimer R, Hu C. Reverse antenna effect due to process-induced quasi-breakdown of gate oxide. 1996. 論文發表於 Proceedings of the 1996 International Integrated Reliability Workshop, Lake Tahoe, CA, USA, .