@inproceedings{f319ea705da44b7ebe78f885a824d4eb,
title = "Revisited parasitic bipolar effect in FDSOI MOSFETs: Mechanism, gain extraction and circuit applications",
abstract = "The parasitic bipolar effect in fully-depleted (FD) silicon-on-insulator (SOI) transistors is revisited including impact ionization and band-to-band tunneling. The current gain β of the parasitic bipolar transistor (PBT) was measured at different temperatures and drain voltages. Back-gate biasing was demonstrated to efficiently suppress the bipolar amplification. TCAD simulations showed that the parasitic bipolar effect enhanced the leakage power in circuits. A strategy to counter its effect is proposed based on the power analysis of 6T SRAM cell with back-gate modulation. ",
author = "Wang, {G. Q.} and Liu, {F. Y.} and B. Li and Luo, {J. J.} and Y. Huang and Su, {X. H.} and Wang, {Y. C.} and Han, {Z. S.} and Wu, {C. N.} and Zhang, {J. M.} and S. Cristoloveanu",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020 ; Conference date: 01-09-2020 Through 30-09-2020",
year = "2020",
month = sep,
day = "1",
doi = "10.1109/EUROSOI-ULIS49407.2020.9365391",
language = "English",
series = "2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020",
address = "United States",
}