Revisited parasitic bipolar effect in FDSOI MOSFETs: Mechanism, gain extraction and circuit applications

G. Q. Wang, F. Y. Liu, B. Li, J. J. Luo, Y. Huang, X. H. Su, Y. C. Wang, Z. S. Han, C. N. Wu, J. M. Zhang, S. Cristoloveanu

研究成果: Conference contribution

摘要

The parasitic bipolar effect in fully-depleted (FD) silicon-on-insulator (SOI) transistors is revisited including impact ionization and band-to-band tunneling. The current gain β of the parasitic bipolar transistor (PBT) was measured at different temperatures and drain voltages. Back-gate biasing was demonstrated to efficiently suppress the bipolar amplification. TCAD simulations showed that the parasitic bipolar effect enhanced the leakage power in circuits. A strategy to counter its effect is proposed based on the power analysis of 6T SRAM cell with back-gate modulation.

原文English
主出版物標題2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728187655
DOIs
出版狀態Published - 2020 九月 1
事件2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020 - Caen, France
持續時間: 2020 九月 12020 九月 30

出版系列

名字2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020

Conference

Conference2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
國家/地區France
城市Caen
期間20-09-0120-09-30

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料
  • 儀器

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