TY - JOUR
T1 - Rewritable ferroelectric vortex pairs in BiFeO3
AU - Li, Yang
AU - Jin, Yaming
AU - Lu, Xiaomei
AU - Yang, Jan Chi
AU - Chu, Ying Hao
AU - Huang, Fengzhen
AU - Zhu, Jinsong
AU - Cheong, Sang Wook
N1 - Funding Information:
This work was supported by the National Key Research Program of China (No. 2016YFA0201004), the 973 Project of MOST (No. 2015CB921201), the National Natural Science Foundation of China (Nos. 51225201 and 51672123), the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD) and SWC is supported by the Gordon and Betty Moore Foundation’s EPiQS Initiative through Grant GBMF4413 to the Rutgers Center for Emergent Materials.
Publisher Copyright:
© 2017 The Author(s).
PY - 2017/12/1
Y1 - 2017/12/1
N2 - Ferroelectric vortex in multiferroic materials has been considered as a promising alternative to current memory cells for the merit of high storage density. However, the formation of regular natural ferroelectric vortex is difficult, restricting the achievement of vortex memory device. Here, we demonstrated the creation of ferroelectric vortex-antivortex pairs in BiFeO3 thin films by using local electric field. The evolution of the polar vortex structure is studied by piezoresponse force microscopy at nanoscale. The results reveal that the patterns and stability of vortex structures are sensitive to the poling position. Consecutive writing and erasing processes cause no influence on the original domain configuration. The Z4 proper coloring vortex-antivortex network is then analyzed by graph theory, which verifies the rationality of artificial vortex-antivortex pairs. This study paves a foundation for artificial regulation of vortex, which provides a possible pathway for the design and realization of non-volatile vortex memory devices and logical devices.
AB - Ferroelectric vortex in multiferroic materials has been considered as a promising alternative to current memory cells for the merit of high storage density. However, the formation of regular natural ferroelectric vortex is difficult, restricting the achievement of vortex memory device. Here, we demonstrated the creation of ferroelectric vortex-antivortex pairs in BiFeO3 thin films by using local electric field. The evolution of the polar vortex structure is studied by piezoresponse force microscopy at nanoscale. The results reveal that the patterns and stability of vortex structures are sensitive to the poling position. Consecutive writing and erasing processes cause no influence on the original domain configuration. The Z4 proper coloring vortex-antivortex network is then analyzed by graph theory, which verifies the rationality of artificial vortex-antivortex pairs. This study paves a foundation for artificial regulation of vortex, which provides a possible pathway for the design and realization of non-volatile vortex memory devices and logical devices.
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U2 - 10.1038/s41535-017-0047-2
DO - 10.1038/s41535-017-0047-2
M3 - Article
AN - SCOPUS:85051811721
SN - 2397-4648
VL - 2
JO - npj Quantum Materials
JF - npj Quantum Materials
IS - 1
M1 - 47
ER -