TY - JOUR
T1 - RF MEMS capacitive switch with leaky nanodiamond dielectric film
AU - Chen, Changwei
AU - Tzeng, Yonhua
AU - Kohn, Erhard
AU - Wang, Chin Hung
AU - Mao, Jun Kai
N1 - Funding Information:
We are grateful to the financial support by NSC-Taiwan under grants 98-3114-M-006-001 , 99-2120-M-006-004 , and 96-2221-E-006-286-MY3 . Technical assistance in device fabrication by National Nano Device Laboratory and C–V measurements by Laboratory of Professor W.C. Liu, Institute of Microelectronics, National Cheng Kung University are appreciated.
PY - 2011/4
Y1 - 2011/4
N2 - RF MEMS capacitive switches using leaky nanodiamond as a dielectric film are studied and compared with those using Si3N4. Characteristics of dielectric charging and discharging are analyzed at temperature ranging from - 196 °C to 150 °C. Electrical resistivity of leaky nanodiamond is measured to be lower than that of Si3N 4 by 3 to 6 orders of magnitude at room temperature. Trapped charges in leaky nanodiamond dielectric discharge much more quickly than those in Si3N4 while the power dissipation of nanodiamond based switches remains low. As a result, charge trapping induced shift in electrostatic actuation voltage is greatly reduced compared to that with Si 3N4 and becomes non-detectable under the reported conditions. RF MEMS capacitive switches based on leaky nanodiamond dielectric are, therefore, more reliable than those with Si3N4.
AB - RF MEMS capacitive switches using leaky nanodiamond as a dielectric film are studied and compared with those using Si3N4. Characteristics of dielectric charging and discharging are analyzed at temperature ranging from - 196 °C to 150 °C. Electrical resistivity of leaky nanodiamond is measured to be lower than that of Si3N 4 by 3 to 6 orders of magnitude at room temperature. Trapped charges in leaky nanodiamond dielectric discharge much more quickly than those in Si3N4 while the power dissipation of nanodiamond based switches remains low. As a result, charge trapping induced shift in electrostatic actuation voltage is greatly reduced compared to that with Si 3N4 and becomes non-detectable under the reported conditions. RF MEMS capacitive switches based on leaky nanodiamond dielectric are, therefore, more reliable than those with Si3N4.
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U2 - 10.1016/j.diamond.2011.02.008
DO - 10.1016/j.diamond.2011.02.008
M3 - Article
AN - SCOPUS:79952722965
SN - 0925-9635
VL - 20
SP - 546
EP - 550
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 4
ER -