RHEED studies of epitaxial growth of CoGa on GaAs by MBE - determination of epitaxial phases and orientations

T. C. Kuo, T. W. Kang, K. L. Wang

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

Epitaxial growth of single crystal CoGa is investigated in-situ using reflection high energy electron diffraction (RHEED). The formation of different phases of CoGa (different stoichiometric compounds and epitaxial orientations) due to various initial growth conditions has been probed with X-ray diffraction and correlated with the RHEED patterns. The growth of (100)CoGa or (110)CoGa is found strongly dependent on the termination of the GaAs surface, with either Co or Ga, before the epitaxial deposition of CoGa. When the flux ratio is deviated from the proper stoichiometric range, additional Co-Ga-As compounds are found in the X-ray diffraction measurement. It is concluded that the CoGa phases and orientations can be determined by pre-deposition of Co or Ga with a control of stoichiometry in the proper range. The high quality epitaxial CoGa has potential applications in thermodynamically stable contacts, and more importantly for fabrication of GaAs/metal/GaAs quantum well structures.

原文English
頁(從 - 到)996-1002
頁數7
期刊Journal of Crystal Growth
111
發行號1-4
DOIs
出版狀態Published - 1991 五月 2

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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