Rapid thermal annealing (RTA) is proved to be more efficient in dissociating hydrogen complexes than using a constant period of voltage stress (CPVS). Without waiting for the bond breaking of complexes by minority carrier injection, RTA favors the critical base-emitter voltage (VBE) responsible for the occurrence of burn-in (BI) from 1.75 to 1.4 V and thus assists CPVS in reducing VBE by about 25% used in BI suppression. Besides eliminating the BI, the sample first prepared by RTA and followed by CPVS has larger base and collector current densities at VBE > 1.1 V and reaches 6 times those at VBE > 1.3 V compared with the sample only using by CPVS.
|頁（從 - 到）||974-976|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2007 三月 8|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)