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Role of antisite disorder, electron-electron correlations, and a surface valence transition in the electronic structure of CeMnNi4

  • Pampa Sadhukhan
  • , Sunil Wilfred D′souza
  • , Vipin Kumar Singh
  • , Rajendra Singh Dhaka
  • , Andrei Gloskovskii
  • , Sudesh Kumar Dhar
  • , Pratap Raychaudhuri
  • , Ashish Chainani
  • , Aparna Chakrabarti
  • , Sudipta Roy Barman

研究成果: Article同行評審

12   !!Link opens in a new tab 引文 斯高帕斯(Scopus)

摘要

CeMnNi4 exhibits an unusually large spin polarization, but its origin has baffled researchers for more than a decade. We use bulk sensitive hard x-ray photoelectron spectroscopy (HAXPES) and density functional theory based on the Green's function technique to demonstrate the importance of electron-electron correlations of both the Ni 3d (UNi) and Mn 3d (UMn) electrons in explaining the valence band of this multiply correlated material. We show that Mn-Ni antisite disorder as well as UNi play a crucial role in enhancing its spin polarization: Antisite disorder broadens a Ni 3d minority-spin peak close to the Fermi level (EF), while an increase in UNi shifts it toward EF, both leading to a significant increase of minority-spin states at EF. Furthermore, the rare occurrence of a valence state transition between the bulk and the surface is demonstrated highlighting the importance of HAXPES in resolving the electronic structure of materials unhindered by surface effects.

原文English
文章編號035102
期刊Physical Review B
99
發行號3
DOIs
出版狀態Published - 2019 1月 2

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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