Room temperature characteristics of GaAs δ-doped superlattice switching transistor

W. C. Liu, C. Y. Sun, W. S. Lour, D. F. Guo, Y. S. Lee

研究成果: Paper同行評審

摘要

In this paper, a new functional GaAs switching transistor is demonstrated. A sawtooth δ-Doped superlattice is introduced between anode and cathode. Holes, created by the avalanche multiplications near the metal-semiconductor (M-S) junction, play an important role in the transport properties. An attractive S-shaped negative differential resistance (NDR) phenomenon in the experimental current-voltage characteristics is observed. Furthermore, with proper operation of the third electrode, gate, the studied structure performs a controllable switching characteristics.

原文English
頁面368-370
頁數3
DOIs
出版狀態Published - 1991
事件23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
持續時間: 1991 八月 271991 八月 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
城市Yokohama, Jpn
期間91-08-2791-08-29

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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