TY - GEN
T1 - Room-temperature diamond seeding and microwave plasma enhanced CVD growth of nanodiamond with a tungsten interfacial layer
AU - Chu, Yueh Chieh
AU - Jiang, Gerald
AU - Chang, Chi
AU - Ting, Jyh Ming
AU - Lee, Hsin Le
AU - Tzeng, Yonhua
PY - 2011/12/1
Y1 - 2011/12/1
N2 - This paper reports on room-temperature high-density diamond seeding for low-temperature microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond (NCD) on W/Si substrates. A tungsten layer acts as a diamond nucleation-enhancing layer. Formation of tungsten-carbide (WC) complex increases the initial nucleation density and plays an important role in facilitating diamond growth characteristics. Microwave plasma-enhanced chemical vapor deposition is applied to synthesize diamond films in Ar diluted by methane without hydrogen additives at low temperature. NCD seeding and film formation were investigated as a function of the thickness of tungsten interfacial layer. Raman spectroscopy, SEM, AFM and TEM were applied to characterize NCD films in order to gain insight into the initial stage of NCD diamond synthesis.
AB - This paper reports on room-temperature high-density diamond seeding for low-temperature microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond (NCD) on W/Si substrates. A tungsten layer acts as a diamond nucleation-enhancing layer. Formation of tungsten-carbide (WC) complex increases the initial nucleation density and plays an important role in facilitating diamond growth characteristics. Microwave plasma-enhanced chemical vapor deposition is applied to synthesize diamond films in Ar diluted by methane without hydrogen additives at low temperature. NCD seeding and film formation were investigated as a function of the thickness of tungsten interfacial layer. Raman spectroscopy, SEM, AFM and TEM were applied to characterize NCD films in order to gain insight into the initial stage of NCD diamond synthesis.
UR - http://www.scopus.com/inward/record.url?scp=84858978016&partnerID=8YFLogxK
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U2 - 10.1109/NANO.2011.6144477
DO - 10.1109/NANO.2011.6144477
M3 - Conference contribution
AN - SCOPUS:84858978016
SN - 9781457715143
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 1367
EP - 1370
BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
T2 - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Y2 - 15 August 2011 through 19 August 2011
ER -