Room-temperature near-infrared random lasing with tin-based perovskites prepared by cvd processing

Hsu Cheng Hsu, Zong Yu Wu, Yan Yu Chen, Li Jyuan Lin

研究成果: Article同行評審

摘要

Nontoxic metal-halide perovskite materials have triggered a revolution of emitting devices as well as solar cells. In this work, we demonstrate a lead-free γ-CsSnI3 perovskite random lasing operated at room temperature in ambient air. The high-purity γ-CsSnI3 films with the orthorhombic structure were grown by chemical vapor deposition (CVD). From the absorption and photoluminescence (PL) spectra, the intense PL emission at 950 nm is consistent with the γ-CsSnI3 band-edge absorption. Moreover, the PL stability test shows the prolonged stability of CVD-grown films. With increasing excitation energy above 18 mJ/cm2, the random laser with a high Q-factor (∼3000) is achieved.

原文English
頁(從 - 到)5180-5184
頁數5
期刊Journal of Physical Chemistry C
125
發行號9
DOIs
出版狀態Published - 2021 三月 11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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