Room-temperature near-infrared random lasing with tin-based perovskites prepared by cvd processing

Nontoxic metal-halide perovskite materials have triggered a revolution of emitting devices as well as solar cells. In this work, we demonstrate a lead-free γ-CsSnI3 perovskite random lasing operated at room temperature in ambient air. The high-purity γ-CsSnI3 films with the orthorhombic structure were grown by chemical vapor deposition (CVD). From the absorption and photoluminescence (PL) spectra, the intense PL emission at 950 nm is consistent with the γ-CsSnI3 band-edge absorption. Moreover, the PL stability test shows the prolonged stability of CVD-grown films. With increasing excitation energy above 18 mJ/cm2, the random laser with a high Q-factor (∼3000) is achieved.