A new GaAs double triangular barrier (DTB) switch, prepared by molecular-beam epitaxy (MBE), using p+-n-δ(p+)-n-δ(p+)-n-n+ structure was fabricated and demonstrated. A tristate switching behaviour due to the sequential collapse of internal barriers was clearly observed for the first time. This phenomenon introduced triple stable regions into the device operation. Based on a proper circuit design, the structure studied has good potential for tristate-logic applications.
|頁（從 - 到）||235-237|
|期刊||Journal of Materials Science: Materials in Electronics|
|出版狀態||Published - 1994 八月 1|
All Science Journal Classification (ASJC) codes