Room temperature operation of a GaAs tristate switch with a double triangular barrier structure

K. F. Yarn, Y. H. Wang

研究成果: Article同行評審

摘要

A new GaAs double triangular barrier (DTB) switch, prepared by molecular-beam epitaxy (MBE), using p+-n-δ(p+)-n-δ(p+)-n-n+ structure was fabricated and demonstrated. A tristate switching behaviour due to the sequential collapse of internal barriers was clearly observed for the first time. This phenomenon introduced triple stable regions into the device operation. Based on a proper circuit design, the structure studied has good potential for tristate-logic applications.

原文English
頁(從 - 到)235-237
頁數3
期刊Journal of Materials Science: Materials in Electronics
5
發行號4
DOIs
出版狀態Published - 1994 八月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

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