Room temperature synthesis of highly stable near-infrared FAPbI₃@TEOS perovskite phosphor for NIR light-emitting diodes

In some medical laboratory tests, a sampling method via intravenous injection is required. Previous research pointed out using near-infrared (NIR) light vein detectors to reduce erroneous injections. Therefore, low-cost, high-efficiency and stability NIR phosphors are highly essential. Herein, high-stability, ultrathin SiO₂ wrapped NIR-CH(NH₂)₂PbI₃ (FAPbI₃) perovskite nanocrystals (NCs) are successfully manufactured via one-step method at room temperature atmospheric synthesis. By optimizing the hydrolytic condensation conditions of tetraethoxysilane (TEOS), the resulting FAPbI₃@SiO₂ perovskite NCs phosphors exhibits a high photoluminescence quantum yields (PLQYs) of 57.2% and improves water resistance and thermostability. The low-cost NIR light-emitting diodes (NIR-LEDs) fabricated by coating NIR-FAPbI₃@SiO₂ perovskite NCs phosphors on commercial blue InGaN LEDs chip demonstrated a ∼787 nm EL spectra of NIR-LEDs under the startup voltage of 2.6 V. Even after 12 h of continuous working, no significant changes were observed in the EL spectra of the NIR-LEDs, which indicates that NIR-FAPbI₃@SiO₂ perovskite NCs phosphor has high capacity in biological applications.