Rounding and taper fin effect of FinFET varactors observed using three-dimensional simulation model

Chien Hung Chen, Ying Chien Fang, Chung Hao Chiang, Sheng Yuan Chu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The capacitance-voltage electrical characteristics of fin field-effect transistor (FinFET) varactors, which have fins with different taper angles and rounding radiuses, are investigated. By fitting the results of a three-dimensional correction simulation with those of an experimentally fabricated FinFET varactor, the two key factors of process simulations (taper angle and rounding radius r) are extracted. It is found that the capacitance of the FinFET varactor changes when the fin cross-sectional profile varies. The examination presented here is useful in the fabrication of FinFETs. It clarifies the fin cross-sectional profile effect on the FinFET varactor capacitance.

原文English
文章編號078001
期刊Japanese Journal of Applied Physics
53
發行號7
DOIs
出版狀態Published - 2014 七月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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