The Heusler-type compound of Ru2NbGa has been successfully synthesized. X-ray analysis confirms that Ru2NbGa crystallizes in a cubic L21 structure. The electronic properties of Ru2NbGa have been characterized by means of the transport and nuclear magnetic resonance (NMR) measurements. The temperature dependence of the electrical resistivity exhibits a typical semimetallic behavior. The NMR spin-lattice relaxation rate shows activated behavior at higher temperatures, attributing to the thermally excited carriers across a pseudogap. We have also deduced a low Fermi-level density of states (DOS), being consistent with the semimetallic characteristic for Ru2NbGa. In addition, we have performed first-principles total-energy calculations including G0W0 and GW0 corrections for band gaps to investigate the electronic band structure of Ru2NbGa. The calculated result reveals an indirect overlap between electron and hole pockets that leads to a residual DOS at the Fermi level, providing a consistent explanation for the experimental observations.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics