Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization

Dung Ching Perng, Jia Bin Yeh, Kuo Chung Hsu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.

原文English
頁(從 - 到)688-692
頁數5
期刊Applied Surface Science
256
發行號3
DOIs
出版狀態Published - 2009 十一月 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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