Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization

Dung Ching Perng; Jia Bin Yeh; Kuo Chung Hsu

doi:10.1016/j.apsusc.2009.08.039

Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization

Dung Ching Perng, Jia Bin Yeh, Kuo Chung Hsu

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.

原文	English
頁（從 - 到）	688-692
頁數	5
期刊	Applied Surface Science
卷	256
發行號	3
DOIs	https://doi.org/10.1016/j.apsusc.2009.08.039
出版狀態	Published - 2009 十一月 15

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2009.08.039

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abstract = "The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.",

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