TY - JOUR
T1 - Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization
AU - Perng, Dung Ching
AU - Yeh, Jia Bin
AU - Hsu, Kuo Chung
N1 - Funding Information:
The authors would like to thank the Thin Film CRD of the United Microelectronic Co. for p-SiOCH film and TEM analysis. This work is supported by Taiwan's National Science Council under contract no. NSC 96-2221-E006-291 and by NCKU Landmark Project C004 .
PY - 2009/11/15
Y1 - 2009/11/15
N2 - The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.
AB - The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.
UR - http://www.scopus.com/inward/record.url?scp=71849089371&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71849089371&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2009.08.039
DO - 10.1016/j.apsusc.2009.08.039
M3 - Article
AN - SCOPUS:71849089371
SN - 0169-4332
VL - 256
SP - 688
EP - 692
JO - Applied Surface Science
JF - Applied Surface Science
IS - 3
ER -