S-Shaped Negative Differential Resistance in a Single GaAs Quantum-Well Switching Device

Wen Chau Liu, Ching Hsi Lin, Chung Yih Sun, Wen Shiung Lour

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A new GaAs-AlGaAs switching device with planar-doped barriers and a GaAs quantum well grown by molecular beam epitaxy and exhibiting S-shaped negative differential resistance (NDR) has been fabricated. The NDR phenomenon is attributed mainly to impact ionization within the undoped collector region. Furthermore, the studied NDR properties are very sensitive to the environmental temperature.

原文English
頁(從 - 到)L1385-L1387
期刊Japanese Journal of Applied Physics
29
發行號8
DOIs
出版狀態Published - 1990 八月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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