Scalable RF MIS varactor model

C. Y. Su, B. M. Tseng, S. J. Chang, L. P. Chen

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A scalable varactor model based on the equations in the BSIM3v3 model (Berkeley short-channel IGFET model) is presented to model the behaviour of a silicon-based metal-insulatorsemiconductor (MIS) varactor with different device geometries and bias conditions at different operation frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 3%. The scalable model provides satisfactory performance prediction for realising silicon radio frequency integrated circuits (RFICs).

原文English
頁(從 - 到)760-761
頁數2
期刊Electronics Letters
37
發行號12
DOIs
出版狀態Published - 2001 六月 7

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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