A scalable varactor model based on the equations in the BSIM3v3 model (Berkeley short-channel IGFET model) is presented to model the behaviour of a silicon-based metal-insulatorsemiconductor (MIS) varactor with different device geometries and bias conditions at different operation frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 3%. The scalable model provides satisfactory performance prediction for realising silicon radio frequency integrated circuits (RFICs).
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering