Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

J. Appenzeller, R. Martel, P. Solomon, K. Chan, Ph Avouris, J. Knoch, J. Benedict, M. Tanner, S. Thomas, K. L. Wang, J. A. Del Alamo

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18 引文 斯高帕斯(Scopus)

摘要

We present a scheme for the fabrication of ultrashort channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography and molecular-beam epitaxy. The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic etching of an n++ layer grown on a silicon on insulator wafer. The method is self-limiting and can produce MOSFET devices with channel lengths of less than 10 nm. Measurements on the first batch of n-MOSFET devices fabricated with this approach show very good output characteristics and good control of short-channel effects.

原文English
頁(從 - 到)298-300
頁數3
期刊Applied Physics Letters
77
發行號2
DOIs
出版狀態Published - 2000 七月 10

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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