Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer

M. L. Lee, J. K. Sheu, S. W. Lin

研究成果: Article

46 引文 斯高帕斯(Scopus)

摘要

The Schottky barrier heights of metal contacts, including W Si0.8, Cr, Ti, Pt, and Ni, on n -type gallium nitride (GaN) with a GaN cap layer grown at low-temperature (LTG) were studied. Higher barriers can be formed by introducing LTG GaN on top of the conventional structures. The higher Schottky barrier observed in samples with the LTG GaN cap layer may be due to the facts that the high-resistivity LTG GaN layer may passivate the surface defects (pits) formed from threading dislocations or it may cause the Fermi-level pinning effect at the metal/semiconductor interface, revealing a weak dependence of Schottky barrier height on the metal work function. The measured barrier heights of the LTG GaN-capped samples were 1.02-1.13 eV.

原文English
文章編號032103
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
88
發行號3
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

指紋 深入研究「Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer」主題。共同形成了獨特的指紋。

引用此