Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells

Shui Jinn Wang, San Lein Wu, Fang Yuh Yeh, Ching Yuan Cheng

研究成果: Conference article同行評審

4 引文 斯高帕斯(Scopus)

摘要

A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

原文English
頁(從 - 到)2429-2434
頁數6
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
33
發行號4 B
出版狀態Published - 1994 四月
事件Proceedings of the 15th Dry Process Symposium (DPS 1993) - Tokyo, Jpn
持續時間: 1993 十一月 11993 十一月 2

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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