TY - JOUR
T1 - Seed-Assisted Synthesis of Ni(OH)2 Nanosheets on InGaN Films as Photoelectrodes toward Solar-Driven Water Splitting
AU - Yao, Yu Tsun
AU - Huang, Ting Wei
AU - Chuang, Yung Lan
AU - Lee, Ming Lun
AU - Sheu, Jinn Kong
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/9/25
Y1 - 2023/9/25
N2 - In this study, we conducted photoelectrochemical (PEC) water-splitting reactions using indium gallium nitride (InGaN) as photoelectrodes to extend light absorption from ultraviolet to visible wavelengths. However, the bare InGaN films experience significant photocorrosion due to numerous defects resulting from the substantial lattice mismatches between GaN and InGaN. While Ni(OH)2 nanosheets, prepared through a hydrothermal method and decorated on the InGaN photoelectrodes, show promise in mitigating photocorrosion, incomplete coverage of Ni(OH)2 on the InGaN photoelectrodes leads to corrosion in the uncovered areas. To enhance the coverage of Ni(OH)2 nanosheets on InGaN-based photoelectrodes, we synthesized Ni(OH)2 nanosheets using a NiO nanofilm as the seed layer. Experimental results demonstrate that photoelectrodes made of the Ni(OH)2/NiO/InGaN composite films exhibit superior PEC performance compared to that of NiO-free InGaN photoelectrodes. Additionally, after stability tests, no significant photocorrosion was observed on the Ni(OH)2-coated InGaN surface with the NiO seed layer while achieving higher photocurrents and increased hydrogen production rates. The Ni(OH)2/NiO/InGaN photoelectrodes exhibit approximately 30% enhancement in photocurrents compared to the bare InGaN films.
AB - In this study, we conducted photoelectrochemical (PEC) water-splitting reactions using indium gallium nitride (InGaN) as photoelectrodes to extend light absorption from ultraviolet to visible wavelengths. However, the bare InGaN films experience significant photocorrosion due to numerous defects resulting from the substantial lattice mismatches between GaN and InGaN. While Ni(OH)2 nanosheets, prepared through a hydrothermal method and decorated on the InGaN photoelectrodes, show promise in mitigating photocorrosion, incomplete coverage of Ni(OH)2 on the InGaN photoelectrodes leads to corrosion in the uncovered areas. To enhance the coverage of Ni(OH)2 nanosheets on InGaN-based photoelectrodes, we synthesized Ni(OH)2 nanosheets using a NiO nanofilm as the seed layer. Experimental results demonstrate that photoelectrodes made of the Ni(OH)2/NiO/InGaN composite films exhibit superior PEC performance compared to that of NiO-free InGaN photoelectrodes. Additionally, after stability tests, no significant photocorrosion was observed on the Ni(OH)2-coated InGaN surface with the NiO seed layer while achieving higher photocurrents and increased hydrogen production rates. The Ni(OH)2/NiO/InGaN photoelectrodes exhibit approximately 30% enhancement in photocurrents compared to the bare InGaN films.
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U2 - 10.1021/acsaem.3c01489
DO - 10.1021/acsaem.3c01489
M3 - Article
AN - SCOPUS:85173131479
SN - 2574-0962
VL - 6
SP - 9516
EP - 9522
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
IS - 18
ER -