Seeded growth of boron arsenide single crystals with high thermal conductivity

Fei Tian, Bai Song, Bing Lv, Jingying Sun, Shuyuan Huyan, Qi Wu, Jun Mao, Yizhou Ni, Zhiwei Ding, Samuel Huberman, Te Huan Liu, Gang Chen, Shuo Chen, Ching Wu Chu, Zhifeng Ren

研究成果: Article同行評審

35 引文 斯高帕斯(Scopus)

摘要

Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m-1K-1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m-1K-1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.

原文English
文章編號031903
期刊Applied Physics Letters
112
發行號3
DOIs
出版狀態Published - 2018 1月 15

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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