Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory

Ching Yuan Ho, Jr Hau He, Yuan Pul Chang, Chenhsin Lien

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (Ijun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces Ijun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from Ijun deterioration but also adjusts contact resistance as well.

原文English
頁(從 - 到)6850-6852
頁數3
期刊Thin Solid Films
517
發行號24
DOIs
出版狀態Published - 2009 十月 30

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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