Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures

Ming Lun Lee, Yu Hsiang Yeh, Kuo Hua Chang, Po Cheng Chen, Wei Chih Lai, Jinn Kong Sheu

研究成果: Article

1 引文 (Scopus)

摘要

Al0.25Ga0.75N ultraviolet (UV) p-i-n photodiodes (PDs) with top and inverted p-layer structure are created by selective-area growth on a GaN template layer. All PDs exhibit typical zero bias peak responsivity at 310 nm and the UV-to-visible (310/400 nm) spectral rejection ratio is greater than three orders of magnitude. In contrast to conventional AlGaN-based p-i-n photodiodes, the inverted devices with low-resistivity n-type AlGaN top-contact layers exhibit a nearly flat spectral response at the short wavelength regions (210-310 nm). The proposed device structure can achieve solar-blind, AlGaN/GaN-based p-i-n PDs with high-aluminum content and reduced tensile strain due to the lattice mismatch between AlGaN and GaN layers.

原文English
文章編號6824169
期刊IEEE Journal on Selected Topics in Quantum Electronics
20
發行號6
DOIs
出版狀態Published - 2014 十一月 1

指紋

Photodiodes
photodiodes
Lattice mismatch
Tensile strain
spectral sensitivity
rejection
templates
aluminum
Aluminum
Wavelength
electrical resistivity
wavelengths

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Lee, Ming Lun ; Yeh, Yu Hsiang ; Chang, Kuo Hua ; Chen, Po Cheng ; Lai, Wei Chih ; Sheu, Jinn Kong. / Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures. 於: IEEE Journal on Selected Topics in Quantum Electronics. 2014 ; 卷 20, 編號 6.
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abstract = "Al0.25Ga0.75N ultraviolet (UV) p-i-n photodiodes (PDs) with top and inverted p-layer structure are created by selective-area growth on a GaN template layer. All PDs exhibit typical zero bias peak responsivity at 310 nm and the UV-to-visible (310/400 nm) spectral rejection ratio is greater than three orders of magnitude. In contrast to conventional AlGaN-based p-i-n photodiodes, the inverted devices with low-resistivity n-type AlGaN top-contact layers exhibit a nearly flat spectral response at the short wavelength regions (210-310 nm). The proposed device structure can achieve solar-blind, AlGaN/GaN-based p-i-n PDs with high-aluminum content and reduced tensile strain due to the lattice mismatch between AlGaN and GaN layers.",
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Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures. / Lee, Ming Lun; Yeh, Yu Hsiang; Chang, Kuo Hua; Chen, Po Cheng; Lai, Wei Chih; Sheu, Jinn Kong.

於: IEEE Journal on Selected Topics in Quantum Electronics, 卷 20, 編號 6, 6824169, 01.11.2014.

研究成果: Article

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AB - Al0.25Ga0.75N ultraviolet (UV) p-i-n photodiodes (PDs) with top and inverted p-layer structure are created by selective-area growth on a GaN template layer. All PDs exhibit typical zero bias peak responsivity at 310 nm and the UV-to-visible (310/400 nm) spectral rejection ratio is greater than three orders of magnitude. In contrast to conventional AlGaN-based p-i-n photodiodes, the inverted devices with low-resistivity n-type AlGaN top-contact layers exhibit a nearly flat spectral response at the short wavelength regions (210-310 nm). The proposed device structure can achieve solar-blind, AlGaN/GaN-based p-i-n PDs with high-aluminum content and reduced tensile strain due to the lattice mismatch between AlGaN and GaN layers.

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