Selective growth of silicon nanowires on glass substrate with an ultrathin a-Si:H layer

H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, C. L. Hsu, W. Y. Weng, C. W. Liu, Y. H. Lee, B. T. Dai

研究成果: Article

4 引文 (Scopus)

摘要

High density silicon nanowires (SiNWs) were selectively grown on a Cr/glass template with a very thin 5 nm thick a-Si:H layer at 500°C by a vapor-liquid-solid process using Au-Si nanoparticles as catalysts. SiNWs cannot be grown without the a-Si:H layer. Field emitters using these SiNWs were also fabricated. The threshold field of the fabricated field emitters was 15 V/μm. Furthermore, the field enhancement factor, Β, of the fabricated SiNW field emitter was around 1700.

原文English
頁(從 - 到)K29-K31
期刊Electrochemical and Solid-State Letters
13
發行號4
DOIs
出版狀態Published - 2010 二月 22

指紋

Silicon
Nanowires
nanowires
Glass
emitters
glass
silicon
Substrates
templates
Vapors
vapors
Nanoparticles
catalysts
nanoparticles
Catalysts
thresholds
augmentation
Liquids
liquids

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

引用此文

Hsueh, H. T. ; Hsueh, T. J. ; Chang, S. J. ; Hung, F. Y. ; Hsu, C. L. ; Weng, W. Y. ; Liu, C. W. ; Lee, Y. H. ; Dai, B. T. / Selective growth of silicon nanowires on glass substrate with an ultrathin a-Si:H layer. 於: Electrochemical and Solid-State Letters. 2010 ; 卷 13, 編號 4. 頁 K29-K31.
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Selective growth of silicon nanowires on glass substrate with an ultrathin a-Si:H layer. / Hsueh, H. T.; Hsueh, T. J.; Chang, S. J.; Hung, F. Y.; Hsu, C. L.; Weng, W. Y.; Liu, C. W.; Lee, Y. H.; Dai, B. T.

於: Electrochemical and Solid-State Letters, 卷 13, 編號 4, 22.02.2010, p. K29-K31.

研究成果: Article

TY - JOUR

T1 - Selective growth of silicon nanowires on glass substrate with an ultrathin a-Si:H layer

AU - Hsueh, H. T.

AU - Hsueh, T. J.

AU - Chang, S. J.

AU - Hung, F. Y.

AU - Hsu, C. L.

AU - Weng, W. Y.

AU - Liu, C. W.

AU - Lee, Y. H.

AU - Dai, B. T.

PY - 2010/2/22

Y1 - 2010/2/22

N2 - High density silicon nanowires (SiNWs) were selectively grown on a Cr/glass template with a very thin 5 nm thick a-Si:H layer at 500°C by a vapor-liquid-solid process using Au-Si nanoparticles as catalysts. SiNWs cannot be grown without the a-Si:H layer. Field emitters using these SiNWs were also fabricated. The threshold field of the fabricated field emitters was 15 V/μm. Furthermore, the field enhancement factor, Β, of the fabricated SiNW field emitter was around 1700.

AB - High density silicon nanowires (SiNWs) were selectively grown on a Cr/glass template with a very thin 5 nm thick a-Si:H layer at 500°C by a vapor-liquid-solid process using Au-Si nanoparticles as catalysts. SiNWs cannot be grown without the a-Si:H layer. Field emitters using these SiNWs were also fabricated. The threshold field of the fabricated field emitters was 15 V/μm. Furthermore, the field enhancement factor, Β, of the fabricated SiNW field emitter was around 1700.

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