摘要
Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-boron-selenium (CuBSe2) is a chalcopyrite material with a near-optimum band gap of ∼3.13 eV. Semiconductor CuBSe2 nanorods were successfully prepared via a relatively simple and convenient solvothermal route. The device parameters for a single junction CuBSe2 solar cell under AM 1.5 G are as follows: open circuit voltage of 310 mV, short-circuit current of 25.5 mA cm-2, fill factor of 24%, and a power conversion efficiency of 1.89%. Based on a series of comparative experiments under various reaction conditions, the probable formation mechanism of crystals CuBSe2 nanorods is proposed.
原文 | English |
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頁(從 - 到) | 2909-2914 |
頁數 | 6 |
期刊 | CrystEngComm |
卷 | 13 |
發行號 | 8 |
DOIs | |
出版狀態 | Published - 2011 4月 21 |
All Science Journal Classification (ASJC) codes
- 化學 (全部)
- 材料科學(全部)
- 凝聚態物理學