We report on the growth of InAs Quantum dot stacks of various periods on silicon grown by molecular beam epitaxy. Quantum dot layers of InAs, separated by a very thin GaAs spacer layer, are grown directly on hydrogen terminated (100) Si surface. The dependence of dimensional distribution on the growth parameters like temperature and monolayer coverage is studied by atomic force microscopy. The effects of rapid thermal annealing on the stability of stacked structures are investigated by Raman scattering experiments. The morphological changes are characterized in terms of shifts in the longitudinal optic (LO) and transverse optic (TO) phonon modes of InAs and GaAs forming the structure. Post growth annealing has been found to lead to significant alloying of InAs and GaAs in the successive layers leading to the transformation of three-dimensional quantum dot structure to a two dimensional InxGa1-xAs like compositional alloy layer.
|頁（從 - 到）||46-58|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 2000|
|事件||2nd Conference on Silicon-based Optoelectronics - San Jose, CA, USA|
持續時間: 2000 一月 28 → 2000 一月 28
All Science Journal Classification (ASJC) codes