Self-Powered ZnO nanowire UV photodetector integrated with GaInP/GaAs/Ge solar cell

Jei Li Hou; Shoou Jin Chang; Chih Hung Wu; Ting Jen Hsueh

doi:10.1109/LED.2013.2269992

Self-Powered ZnO nanowire UV photodetector integrated with GaInP/GaAs/Ge solar cell

Jei Li Hou, Shoou Jin Chang, Chih Hung Wu, Ting Jen Hsueh

研究成果: Article › 同行評審

20 引文斯高帕斯（Scopus）

摘要

This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <370nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is ∼218 and the measured responsivity is 3.39× 10^-4 AW. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of ∼1000.

原文	English
文章編號	6555860
頁（從 - 到）	1023-1025
頁數	3
期刊	IEEE Electron Device Letters
卷	34
發行號	8
DOIs	https://doi.org/10.1109/LED.2013.2269992
出版狀態	Published - 2013

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2013.2269992

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abstract = "This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <370nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is ∼218 and the measured responsivity is 3.39× 10-4 AW. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of ∼1000.",

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AU - Hou, Jei Li

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AU - Hsueh, Ting Jen

PY - 2013

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AB - This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <370nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is ∼218 and the measured responsivity is 3.39× 10-4 AW. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of ∼1000.

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Self-Powered ZnO nanowire UV photodetector integrated with GaInP/GaAs/Ge solar cell

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