We proposed and analyzed a semiconductor multi-barrier tunneling structure, which is incorporated with a quantum dot layer for a cellular automata logic module. Both in-plane and cross-plane directions of tunneling in the self-assembled quantum dot layer were taken into consideration. Nonlinear I-V characteristics as a result of tunneling of a multi-cell system were simulated and used for the modular logic construction. Elemental units, "AND", "OR" and "EXCHANGE" gate operations where shown. In addition, we demonstrated a set of local transition rules for use in one logic module driven by the edge bias. The stability of the scheme with respect to material structure imperfections is discussed.
|頁（從 - 到）||445-448|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 2003|
|事件||10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation|
持續時間: 2002 六月 17 → 2002 六月 21
All Science Journal Classification (ASJC) codes