Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons

M. Poljak; K. L. Wang; T. Suligoj

doi:10.1109/ULIS.2014.6813900

Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons

M. Poljak, K. L. Wang, T. Suligoj

電機資訊學院

研究成果: Paper › 同行評審

2 引文斯高帕斯（Scopus）

摘要

We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.

原文	English
頁面	37-40
頁數	4
DOIs	https://doi.org/10.1109/ULIS.2014.6813900
出版狀態	Published - 2014
事件	2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden 持續時間: 2014 4月 7 → 2014 4月 9

Conference

Conference	2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014
國家/地區	Sweden
城市	Stockholm
期間	14-04-07 → 14-04-09

All Science Journal Classification (ASJC) codes

電氣與電子工程

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10.1109/ULIS.2014.6813900

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引用此

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abstract = "We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.",

author = "M. Poljak and Wang, {K. L.} and T. Suligoj",

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AB - We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.

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Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons

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