Sensitivity of EGFET pH sensors with TiO₂ nanowires

In this paper, we used an E-beam evaporator to fabricate TiO₂ nanowires for use in extended-gate field-effect transistor sensors. A thick E-beam deposited titanium film was annealed in a 700°C furnace for 2 h to synthesize the TiO₂ nanowires. The sensitivities of the sensors, calculated from the linear relationships of the extended-gate field-effect transistors (EGFETs), were 33.5 μA/pH and 32.65 mV/pH. Our results indicate that the TiO₂ nanowire films can be easily and successfully fabricated using the E-beam evaporator for use in EGFET membranes; it was found that highly ordered nanowires could be effectively produced on glass substrates.