Shallow acceptor states in SiGe quantum wells

M. S. Kagan, I. V. Altukhov, K. A. Korolev, D. V. Orlov, V. P. Sinis, S. G. Thomas, K. L. Wang, K. Schmalz, I. N. Yassievich

研究成果: Article同行評審

摘要

The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.

原文English
頁(從 - 到)233-236
頁數4
期刊Materials Science Forum
297-298
出版狀態Published - 1999

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

指紋

深入研究「Shallow acceptor states in SiGe quantum wells」主題。共同形成了獨特的指紋。

引用此