The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.
|頁（從 - 到）||233-236|
|期刊||Materials Science Forum|
|出版狀態||Published - 1999|
All Science Journal Classification (ASJC) codes