Shallow acceptor states in SiGe quantum wells

M. S. Kagan, I. V. Altukhov, K. A. Korolev, D. V. Orlov, V. P. Sinis, S. G. Thomas, K. L. Wang, K. Schmalz, I. N. Yassievich

研究成果: Article同行評審


The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.

頁(從 - 到)233-236
期刊Materials Science Forum
出版狀態Published - 1999

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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