Shallow acceptor states in SiGe quantum wells

M. S. Kagan; I. V. Altukhov; K. A. Korolev; D. V. Orlov; V. P. Sinis; S. G. Thomas; K. L. Wang; K. Schmalz; I. N. Yassievich

Shallow acceptor states in SiGe quantum wells

M. S. Kagan
, I. V. Altukhov
, K. A. Korolev
, D. V. Orlov
, V. P. Sinis
, S. G. Thomas
, K. L. Wang
, K. Schmalz
, I. N. Yassievich

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研究成果: Article › 同行評審

摘要

The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.

原文	English
頁（從 - 到）	233-236
頁數	4
期刊	Materials Science Forum
卷	297-298
出版狀態	Published - 1999

All Science Journal Classification (ASJC) codes

一般材料科學
凝聚態物理學
材料力學
機械工業

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title = "Shallow acceptor states in SiGe quantum wells",

abstract = "The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.",

author = "Kagan, \{M. S.\} and Altukhov, \{I. V.\} and Korolev, \{K. A.\} and Orlov, \{D. V.\} and Sinis, \{V. P.\} and Thomas, \{S. G.\} and Wang, \{K. L.\} and K. Schmalz and Yassievich, \{I. N.\}",

year = "1999",

language = "English",

volume = "297-298",

pages = "233--236",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

}

TY - JOUR

T1 - Shallow acceptor states in SiGe quantum wells

AU - Kagan, M. S.

AU - Altukhov, I. V.

AU - Korolev, K. A.

AU - Orlov, D. V.

AU - Sinis, V. P.

AU - Thomas, S. G.

AU - Wang, K. L.

AU - Schmalz, K.

AU - Yassievich, I. N.

PY - 1999

Y1 - 1999

N2 - The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.

AB - The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.

UR - https://www.scopus.com/pages/publications/33751036838

UR - https://www.scopus.com/pages/publications/33751036838#tab=citedBy

M3 - Article

AN - SCOPUS:33751036838

SN - 0255-5476

VL - 297-298

SP - 233

EP - 236

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Shallow acceptor states in SiGe quantum wells

摘要

All Science Journal Classification (ASJC) codes

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