Shape reversal of Ge/Si domes to pyramids via Si-Ge intermixing and strain reduction

William L. Henstrom, L. I.U. Chuan-Pu, J. Murray Gibson

研究成果: Conference article同行評審

摘要

At 650°C, Si freely intermixes with Ge in the dome islands causing a reduction in the strain of the islands and an increase in island size. The shape reversal of Ge/Si domes to pyramids is investigated by analysis of the strain and size changes that occur on an island by island basis. This was carried out for anneal times of 0, 20, 40 and 60 minutes. Transition islands were observed consistent with previous work [1], which are partially domes and partially pyramids. These islands demonstrated a strain gradient, having a slightly lower strain on the side that has transformed to a pyramid. Cross-sectional STEM was then used to show that this strain gradient is associated with a non-uniform Si intermixing in the islands.

原文English
頁(從 - 到)45-50
頁數6
期刊Materials Research Society Symposium - Proceedings
583
出版狀態Published - 2000
事件Self-Organized Processes in Semiconductor Alloys - Boston, MA, USA
持續時間: 1999 11月 291999 12月 2

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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