Si and Zn co-doped InGaN-GaN white light-emitting diodes

S. J. Chang, L. W. Wu, Y. K. Su, C. H. Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, J. F. Chen, J. M. Tsai

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30 引文 斯高帕斯(Scopus)

摘要

InGaN-GaN double heterostructure (DH) and multi-quantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by metalorganic chemical vapor deposition (MOCVD). It was found that we could observe a broad long-wavelength donor-acceptor (D-A) pair-related emission at 500-560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN band-edge-related blue emission. By increasing the DMZn mole flow rate to 360 nmole/min, we could achieve a Si and Zn co-doped In0.3Ga0.7N-GaN MQW LED with color temperature of 4100 K, color rendering index of 70, and color coordinates x = 0.383, y = 0.405. It was also found that the 20-mA forward voltage and the breakdown voltage of such Si and Zn co-doped In0.3Ga0.7N-GaN MQW LEDs were both smaller than those of the conventional phosphor-converted white LEDs.

原文English
頁(從 - 到)519-521
頁數3
期刊IEEE Transactions on Electron Devices
50
發行號2
DOIs
出版狀態Published - 2003 二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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