The silicon metal-oxide-semiconductor field-effect transistor (MOSFET) prepared via a hot wire implantation doping technique is reported in this letter. Auger electron spectroscopy results indicate that the junction depth of the phosphorus was ∼80 nm. It was also found that the carrier concentration of the phosphorus was ∼5.83 × 1020 cm-3, as determined using from room-temperature Hall measurements. For the MOSFET device, experimental results showed drain current-drain voltage (ID-VD) characteristics of the device measured in the dark. The transistor exhibits standard saturation and pinch-off characteristics, indicating that the entire channel region under the gate metal can be completely depleted. The technique can also be applied to thin-film transistors.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering