Si-based MOSFET and thin film transistor prepared via hot wire implantation doping technique

The silicon metal-oxide-semiconductor field-effect transistor (MOSFET) prepared via a hot wire implantation doping technique is reported in this letter. Auger electron spectroscopy results indicate that the junction depth of the phosphorus was ∼80 nm. It was also found that the carrier concentration of the phosphorus was ∼5.83 × 10²⁰ cm^-3, as determined using from room-temperature Hall measurements. For the MOSFET device, experimental results showed drain current-drain voltage (I_D-V_D) characteristics of the device measured in the dark. The transistor exhibits standard saturation and pinch-off characteristics, indicating that the entire channel region under the gate metal can be completely depleted. The technique can also be applied to thin-film transistors.