Si-based MOSFET and thin film transistor prepared via hot wire implantation doping technique

Yi Hao Chen, Shoou Jinn Chang, Ting Jen Hsueh

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The silicon metal-oxide-semiconductor field-effect transistor (MOSFET) prepared via a hot wire implantation doping technique is reported in this letter. Auger electron spectroscopy results indicate that the junction depth of the phosphorus was ∼80 nm. It was also found that the carrier concentration of the phosphorus was ∼5.83 × 1020 cm-3, as determined using from room-temperature Hall measurements. For the MOSFET device, experimental results showed drain current-drain voltage (ID-VD) characteristics of the device measured in the dark. The transistor exhibits standard saturation and pinch-off characteristics, indicating that the entire channel region under the gate metal can be completely depleted. The technique can also be applied to thin-film transistors.

原文English
文章編號6994768
頁(從 - 到)93-95
頁數3
期刊IEEE Electron Device Letters
36
發行號2
DOIs
出版狀態Published - 2015 二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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