Si homojunction internal photoemission far-infrared detectors

A. G.U. Perera, W. Z. Shen, H. C. Liu, M. Buchanan, M. O. Tanner, K. L. Wang

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A novel 48 μm cutoff wavelength (λc) Si far-infrared (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p+ emitter layers and intrinsic layers) is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3 ± 0.1 A/W at 27.5 μm and detectivity D* of 6.6 × 1010 cm√Hz/W at 4.2K. The λc and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40 ∼ 200 μm) with high performance and tailorable λcs can be realized using higher emitter layer doping concentrations.

原文English
頁(從 - 到)154-159
頁數6
期刊Proceedings of SPIE - The International Society for Optical Engineering
3553
DOIs
出版狀態Published - 1998
事件Detectors, Focal Plane Arrays, and Imaging Devices II - Beijing, China
持續時間: 1998 九月 181998 九月 19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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