Si-MBE SOI DEVICE AND CIRCUITS.

T. L. Lin, K. L. Wang, S. Iyer

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A 100 mu m wide silicon-on-insulator (SOI) structure has been achieved by utilized silicon molecular beam epitaxial (Si-MBE) growth and porous oxidized silicon. A Si-beam with flux density of 7. 8 multiplied by 10**1**3 cm** minus **2s** minus **1 was used to clean the sample surface at 750 degree C prior to MBE growth. The MBE Si film grown on porous Si at 750 degree C by a two-step growth process shows good crystallinity when checked by Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). SOI MOSFET's were successfully fabricated.

原文English
頁(從 - 到)316-322
頁數7
期刊Proceedings - The Electrochemical Society
85-7
出版狀態Published - 1985

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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