A 100 mu m wide silicon-on-insulator (SOI) structure has been achieved by utilized silicon molecular beam epitaxial (Si-MBE) growth and porous oxidized silicon. A Si-beam with flux density of 7. 8 multiplied by 10**1**3 cm** minus **2s** minus **1 was used to clean the sample surface at 750 degree C prior to MBE growth. The MBE Si film grown on porous Si at 750 degree C by a two-step growth process shows good crystallinity when checked by Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). SOI MOSFET's were successfully fabricated.
|頁（從 - 到）||316-322|
|期刊||Proceedings - The Electrochemical Society|
|出版狀態||Published - 1985|
All Science Journal Classification (ASJC) codes
- 工程 (全部)