Silicon molecular beam epitaxy (Si-MBE) was used to grow silicon-on-insulator (SOI) structures on porous Si. By using the laterally enhanced oxidation of the porous silicon, the patterned MBE Silicon film can be completely isolated by SiO//2. Integrated digital test circuits, as well as discrete NMOS devices will be fabricated on the SOI film. The performance of these circuits and devices will be compared with that of identical components processed in standard substrates to illustrate the advantage of this SOI approach.
|頁（從 - 到）||206|
|期刊||Electrochemical Society Extended Abstracts|
|出版狀態||Published - 1985|
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