We present a novel laser-assisted chemical vapor deposition (LACVD) system for growing Si nanocrystals embedded in a Si suboxide matrix at room temperature. Varying growth gas ratio caused the observed photoluminescence (PL) light emission to vary from 1.65 eV to 1.92 eV without post-annealing. A phase-separated model and PL measurements were used to identify Si nanocrystals embedded in Si suboxides.
|頁（從 - 到）||2793-2794|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2004 五月|
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)