Si nanocrystals embedded in Si suboxide matrix grown by laser-assisted chemical vapor deposition at room temperature

Ching Ting Lee, Chun Hung Lin

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

We present a novel laser-assisted chemical vapor deposition (LACVD) system for growing Si nanocrystals embedded in a Si suboxide matrix at room temperature. Varying growth gas ratio caused the observed photoluminescence (PL) light emission to vary from 1.65 eV to 1.92 eV without post-annealing. A phase-separated model and PL measurements were used to identify Si nanocrystals embedded in Si suboxides.

原文English
頁(從 - 到)2793-2794
頁數2
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
發行號5 A
DOIs
出版狀態Published - 2004 五月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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