Si nanowire-based humidity sensors prepared on glass substrate

H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu, B. T. Dai

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

The authors report the growth of Si nanowires on glass substrate by low-temperature vapor-liquid-solid process and the fabrication of Si nanowire-based humidity sensors. It was found that average length of Si nanowires decreased from 1.6 to 1 μ{\rm m}$ while the diameter of Si nanowires increased from 90 to 490 nm as we increased the initial Au catalytic layer thickness from 5 nm to 15 nm. It was also found that current measured from these Si nanowires decreased monotonically with RH. Furthermore, it was found that samples with a thinner Au layer thickness could provide a larger sensor response.

原文English
文章編號5771029
頁(從 - 到)3036-3041
頁數6
期刊IEEE Sensors Journal
11
發行號11
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • 儀器
  • 電氣與電子工程

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