Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Ching Ting Lee, Chang Da Tsai, Chi Yu Wang, Hung Pin Shiao, Tzer En Nee, Jia Nan Shen

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

原文English
頁(從 - 到)2046
頁數1
期刊Applied Physics Letters
67
DOIs
出版狀態Published - 1995

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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