摘要
The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.
原文 | English |
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頁(從 - 到) | 2046 |
頁數 | 1 |
期刊 | Applied Physics Letters |
卷 | 67 |
DOIs | |
出版狀態 | Published - 1995 |
All Science Journal Classification (ASJC) codes
- 物理與天文學(雜項)