Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Ching Ting Lee; Chang Da Tsai; Chi Yu Wang; Hung Pin Shiao; Tzer En Nee; Jia Nan Shen

doi:10.1063/1.115073

Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Ching Ting Lee, Chang Da Tsai, Chi Yu Wang, Hung Pin Shiao, Tzer En Nee, Jia Nan Shen

光電科學與工程學系

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

原文	English
頁（從 - 到）	2046
頁數	1
期刊	Applied Physics Letters
卷	67
DOIs	https://doi.org/10.1063/1.115073
出版狀態	Published - 1995

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.115073

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引用此

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abstract = "The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.",

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AU - Lee, Ching Ting

AU - Tsai, Chang Da

AU - Wang, Chi Yu

AU - Shiao, Hung Pin

AU - Nee, Tzer En

AU - Shen, Jia Nan

PY - 1995

Y1 - 1995

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AB - The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

摘要

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