Sidewall faceting and inter-facet mass transport in selectively grown epitaxial layers on SiO2-masked Si(1 1 0) substrates

Qi Xiang, Shaozhong Li, Dawen Wang, Kunihiro Sakamoto, K. L. Wang, Greg U'Ren, Mark Goorsky

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The facet formation and inter-facet mass transport in selective epitaxial growth (SEG) of Si on SiO2-masked growth windows aligned along [1 1 0] and [1 0 0] directions on Si(1 1 0) substrates by Si gas-source molecular-beam epitaxy were studied. For the sidewalls along the [1 1 0] baseline, both (3 1 1) and (1 1 1) facets were formed, while for the sidewalls along the [1 0 0] baseline, (1 0 0) facets were formed. Mass accumulation around the edges of the top surface was shown to be due to the inter-facet mass transport from the sidewall to top surfaces.

原文English
頁(從 - 到)469-472
頁數4
期刊Journal of Crystal Growth
175-176
發行號PART 1
DOIs
出版狀態Published - 1997 五月

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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