TY - JOUR
T1 - Sidewall faceting and inter-facet mass transport in selectively grown epitaxial layers on SiO2-masked Si(1 1 0) substrates
AU - Xiang, Qi
AU - Li, Shaozhong
AU - Wang, Dawen
AU - Sakamoto, Kunihiro
AU - Wang, K. L.
AU - U'Ren, Greg
AU - Goorsky, Mark
N1 - Funding Information:
This work was partially W. Lynch) and NSF (Dr.
PY - 1997/5
Y1 - 1997/5
N2 - The facet formation and inter-facet mass transport in selective epitaxial growth (SEG) of Si on SiO2-masked growth windows aligned along [1 1 0] and [1 0 0] directions on Si(1 1 0) substrates by Si gas-source molecular-beam epitaxy were studied. For the sidewalls along the [1 1 0] baseline, both (3 1 1) and (1 1 1) facets were formed, while for the sidewalls along the [1 0 0] baseline, (1 0 0) facets were formed. Mass accumulation around the edges of the top surface was shown to be due to the inter-facet mass transport from the sidewall to top surfaces.
AB - The facet formation and inter-facet mass transport in selective epitaxial growth (SEG) of Si on SiO2-masked growth windows aligned along [1 1 0] and [1 0 0] directions on Si(1 1 0) substrates by Si gas-source molecular-beam epitaxy were studied. For the sidewalls along the [1 1 0] baseline, both (3 1 1) and (1 1 1) facets were formed, while for the sidewalls along the [1 0 0] baseline, (1 0 0) facets were formed. Mass accumulation around the edges of the top surface was shown to be due to the inter-facet mass transport from the sidewall to top surfaces.
UR - http://www.scopus.com/inward/record.url?scp=0031146597&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031146597&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(96)01217-1
DO - 10.1016/S0022-0248(96)01217-1
M3 - Article
AN - SCOPUS:0031146597
VL - 175-176
SP - 469
EP - 472
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - PART 1
ER -