SiGe band engineering for MOS, CMOS and quantum effect devices

K. L. Wang, S. G. Thomas, M. O. Tanner

研究成果: Article同行評審

56 引文 斯高帕斯(Scopus)


In this paper, we review recent progress in SiGe MOS technology. Progress in high mobility p-channel and n-channel devices will be presented as well as some of the materials and processing issues related to the fabrication of these heterostructures. In addition, we will present an outlook on the integration of these devices to complimentary MOS (CMOS) based on Si on Insulator technology (SOI). New directions of novel devices utilizing selective epitaxial growth and the integration of Si/Ge superlattices for enhanced performance in field effect transistors are described. Finally, we will examine some of the materials challenges of integrating SiGe technologies with current CMOS production processes.

頁(從 - 到)311-324
期刊Journal of Materials Science: Materials in Electronics
出版狀態Published - 1995 10月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程


深入研究「SiGe band engineering for MOS, CMOS and quantum effect devices」主題。共同形成了獨特的指紋。