SiGe heterostructure field-effect transistor using V-shaped confining potential well

Yu Min Lin, San Lein Wu, Shoou Jinn Chang, Shinji Koh, Yasuhiro Shiraki

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

A working p-type SiGe heterostructure field-effect transistor, utilizing a V-shaped confining potential well as the conducting channel, has been successfully fabricated. The upper boron δ-doping layer acts as a diffusion barrier to slow diffusion into the undoped Si cap layer. On the other hand, the bottom boron δ-doping layer prevents hot holes from escaping the channel by improving carrier confinement. It is found that when a V-shaped confining potential well is used as the conducting channel, the devices exhibit the excellent property not only of higher current density but also enhancement in extrinsic transconductance and linear operation range over a wider dynamic range than those of δ-doped devices for the same dose in SiGe conducting well. The measured transconductance is enhanced three to six tunes over that of the other δ cases.

原文English
頁(從 - 到)69-71
頁數3
期刊IEEE Electron Device Letters
24
發行號2
DOIs
出版狀態Published - 2003 二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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