Molecular-beam epitaxy was used to vertically integrate up to five InGaAs/InAlAs resonant tunneling structures. Devices processed from this heterostructure have five negative differential resistance (NDR) regions in the current-voltage (I-V) characteristic. One NDR region comes from the ground-state-transmission resonance in each tunneling structure. It is shown how the unique sawtooth-like I-V characteristics of this vertically integrated diode can be used for signal processing applications such as frequency multiplication, parity bit generation, and multilevel logic. An analog-to-digital (A/D) converter that is based on the vertically integrated diode is described. Simulations of this type of A/D converter show that it is capable of digitizing input signals with the digital output changing at a 30-GHz rate.
|頁（從 - 到）||2557-2561|
|期刊||Proceedings - IEEE International Symposium on Circuits and Systems|
|出版狀態||Published - 1990 五月|
|事件||1990 IEEE International Symposium on Circuits and Systems Part 4 (of 4) - New Orleans, LA, USA|
持續時間: 1990 五月 1 → 1990 五月 3
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering