Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, M. J. Calderón, S. N. Coppersmith, M. A. Eriksson, Mark Friesen

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that interfacial atomic structure can be used in particular cases as a tool to enhance the fidelity of Si double-dot qubits.

原文English
文章編號165438
期刊Physical Review B
98
發行號16
DOIs
出版狀態Published - 2018 10月 29

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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