Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation

Kunal Kumar, Yu Feng Hsieh, Jen Hong Liao, Kuo Hsing Kao, Yeong Her Wang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

It is well known that there is a critical Sn content for a GeSn alloy, at which the conduction band edges at L and Γ symmetry points are aligned in energy. For GeSn tunnel FET (TFET) simulations, with a given donor concentration, this paper reveals that simulations neglecting the multivalley and nonparabolic band structure would incorrectly predict the subthreshold slope (SS) and the off-currents. We highlight the indispensability of the consideration of the multivalley band structure of GeSn for TFET simulations. This paper provides the required parameters, which may be useful for numerical simulations of other optoelectronic and electronic GeSn devices.

原文English
文章編號8445683
頁(從 - 到)4709-4715
頁數7
期刊IEEE Transactions on Electron Devices
65
發行號10
DOIs
出版狀態Published - 2018 十月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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